Hybrid Superconductor–Semiconductor Material Platforms for Quantum Information Processing
Abstract: The future of energy-efficient computation is expected to be revolutionized by the emergence of the quantum information processing (QIP). With the recent results heralding the quantum supremacy era, there is more interest than ever to quickly turn quantum processors into functional devices that can be applied to today’s most demanding computational tasks. In turn, aggressive scaling and dramatic improvements in qubits quality (i.e. coherence times, noise and crosstalk) will be necessary. This beckons extensive materials research to engineer platforms ideal for fault-tolerant and scalable quantum hardware. In this talk, I will discuss hybrid superconductor–semiconductor (Sm-S) materials systems as promising contenders for this role. I will review some of the most recent developments in the Sm-S hybrid qubit devices. In particular, I will focus on our efforts to integrate group IV semiconductors (i.e. Si & Ge) into gate-tunable hybrid devices. We explore the use of hyperdoped Si and Ge phases for engineering interfaces between conventional superconductors and Si (or Ge). I will discuss the basic properties of the superconducting phases in hyperdoped Si and Ge including the film structure, critical temperature, critical magnetic field, etc. In the end, I will propose various schemes to tune disorder in these superconducting films for potential integration into Josephson junctions for further interface characterizations.
Tuesday, January 14 at 4:00pm to 5:00pm
Kinard Laboratory of Physics, G01 Kinard Lab
140 Delta Epsilon Ct., Clemson, SC 29634, USA